journal article·2016-11

Positive magnetoconductance and dephasing in strongly localized black phosphorus

Tae‐Ho Lee, Euyheon Hwang, Jung‐Bum Choi, Myung‐Ho Bae

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Abstract

We study the magnetoconductance and dephasing in a strongly localized regime in black phosphorus (BP) devices. The phase coherence length, lφ obtained from the magnetoconductance follows a temperature dependence of T–1/3 in the strongly localized regime with kFle < 1 (ξ < lφ) based on the Ioffe–Regel criterion. Here kF, le and ξ are the Fermi wave vector, mean free path and localization length, respectively. The conductance behavior as a function of temperature confirms that the transport regime of our BP is in a variable‐range‐hopping regime, which results in the strongly localized regime.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Neural Networks and Reservoir Computing

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Affiliations

Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

Department of Physics Chungbuk National University Cheongju 28644 Republic of Korea

Advanced Institute of Nanotechnology and department of Physics Sungkyunkwan University Suwon 16419 Republic of Korea

Department of Nano Science University of Science and Technology Yuseong, Daejeon 34113 Republic of Korea

Funding

Korea Research Institute of Standards and Science under the auspices of the project ‘Convergent Science and Technology for Measurements at the Nanoscale’ · National Research Foundation of Korea funded by the Korean government

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