About charge‐transport mechanisms in mesoporous silicon under adsorption of plant viruses
Source abstract
Abstract
Abstract Changes in the electric parameters and the charge‐transport mechanism in a mesoporous silicon under adsorption of TORSV (tomato ringspot virus) and GFLV (grapevine fan leaf virus) NEPO‐viruses are analyzed. The mechanism influencing the electric characteristics of the mesoporous silicon under adsorption of the plant viruses is related with the changes in parameters of a potential‐barrier system due to redistribution of voltages at the silicon structure. The mechanism of charge transport in the mesoporous silicon is more likely connected to the changes in parameters of isotopic heterojunction barriers under small bias voltages, and it can be interpreted as Poole–Frenkel and tunnel conductivity for large bias. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
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References (33)
Show source-provided references
1. S. S. R.Challa Kumar Nanomaterials for Biosensors (Wiley‐VCH Weinheim 2007) p. 430.
2. 10.1016/S0167-5729(99)00012-610.1016/S0167-5729(99)00012-6 ↗
3. 10.1103/PhysRevB.49.298110.1103/PhysRevB.49.2981 ↗
4. 10.1021/ac00116a01810.1021/ac00116a018 ↗
5. 10.1002/adma.1995007121510.1002/adma.19950071215 ↗
6. 10.1002/1521-396X(200011)182:1<163::AID-PSSA163>3.0.CO;2-#10.1002/1521-396X(200011)182:1<163::AID-PSSA163>3.0.CO;2-# ↗
7. Porous silicon – the intelligent biomaterials:http://www.qinetiq.com.
8. 10.1134/S106378260604018X10.1134/S106378260604018X ↗
9. 10.1134/S106378500609005710.1134/S1063785006090057 ↗
10. Yu. A.VashpanovandI. P.Konup in: Combined and Hybrid Adsorbents edited by J. M. Loureiro and M. T. Kartel (Springer New York 2006) pp. 264–267.
11. Plant viruses online:http://image.fs.unidaho.edu.
12. L. P.Villarreal Sci. Am. 97–102 (2004).10.1258/jrsm.97.3.102 ↗
13. 10.1088/0957-4484/19/16/16570410.1088/0957-4484/19/16/165704 ↗
14. Yu. A.VashpanovandV. A.Smyntyna Adsorption Sensitivity of Semiconductors (Astroprint Odessa 2005) p. 216.
15. http://microscopy.org.ua/
16. Bock Laboratories:www.bocklabs.wisc.edu.
17. 10.1002/pssa.20067436710.1002/pssa.200674367 ↗
18. 10.1038/nnano.2006.5510.1038/nnano.2006.55 ↗
19. 10.1063/1.235788210.1063/1.2357882 ↗
20. 10.1021/ja075244z10.1021/ja075244z ↗
21. 10.1002/pssc.20046119010.1002/pssc.200461190 ↗
22. 10.1016/S0921-5107(99)00281-010.1016/S0921-5107(99)00281-0 ↗
23. 10.1007/s10854-005-4949-610.1007/s10854-005-4949-6 ↗
24. Perez J. M. · J. Appl. Phys. · 1992 · 71 · 563
25. Lehmann V. · J. Appl. Phys. · 1991 · 58 · 856
26. 10.1063/1.10356110.1063/1.103561 ↗
27. 10.1103/PhysRevLett.69.127210.1103/PhysRevLett.69.1272 ↗
28. C. A.Reddy T. J.Beveridge J. A.Breznak G. A.Marzluf T. M.Schmidt andL. R.Snyder(eds.) Methods for General and Molecular Microbiology 3rd ed. (ASM Press Washington DC 2007) p. 1069.10.1128/9781555817497 ↗
29. V. F.KiselevandO. V.Krylov Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics (Springer Berlin 1987) p. 279.10.1007/978-3-642-83020-4 ↗
30. I. D.Morohov L. N.Trusov andV. N.Lapovok Physical Phenomena in Superdispersed Medium (Energoisdat Moscow 1984) p. 264.
31. D. V.MorganandR. V.Williams(eds) Physics and Technology of Heterojunction Devices (Peter Peregrinus Ltd. Michael Faraday House United Kingdom 1991) p. 310.10.1049/PBED008E ↗
32. 10.1007/BF0212475010.1007/BF02124750 ↗
33. Dielectric Constant Ref. Guide:http://www.clippercontrols.com/