journal article·2013-10

n‐ZnO/i‐InGaN/p‐GaN heterostructure for solar cell application

Seung‐Yong Nam, Yong‐Seok Choi, Young‐Ho Song, Myoung‐Ho Jung, Chang Mo Kang, Duk‐Jo Kong, Seong‐Ju Park, Jeong‐Yong Lee, Gon Namkoong, Dong‐Seon Lee

physica status solidi (a)· Volume 210· Issue 10
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Abstract

Abstract We report hybrid n‐ZnO/i‐InGaN/p‐GaN solar cells in which the n‐GaN layer of n‐GaN/i‐InGaN/p‐GaN solar cell was replaced with n‐type ZnO. In this study, inverted structures were used for hybrid ZnO/nitride solar cells where p‐type GaN was first grown on sapphire substrate, followed by i‐InGaN and n‐ZnO layers. The as‐fabricated device showed high series resistance and low energy conversion efficiency due to the formation of damaged p‐GaN region during dry etching. On the other hand, formation of microrods on the p‐GaN eased the removal of the damaged p‐GaN resulting in significantly lowered series resistance and enhanced energy conversion efficiency. (a) n‐ZnO/i‐InGaN/p‐GaN solar cell structure without microrods, (b) n‐ZnO/i‐InGaN/p‐GaN solar cell structure with microrods, and (c) magnified image of the dashed box on (b).
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies · Nanowire Synthesis and Applications

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Affiliations

School of Information and Communication Gwangju Institute of Science and Technology (GIST) Korea

School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Korea

Korean Photonics Technology Institute Gwangju 500‐712 Korea

Department of Materials Science and Engineering KAIST Daejeon 305‐701 Korea

Center for Nanomaterials and Chemical Reactions Institute for Basic Science Daejeon 305‐701 Korea

Department of Nanobio Materials and Electronics Gwangju Institute of Science and Technology (GIST) Korea

Department of Electrical and Computer Engineering Applied Research Center Old Dominion University Newport News VA 23606 USA

Funding

National Research Foundation of Korea · Korea government

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