DataVXphysica status solidi (a)Paper
journal article·2020-09Open access

Redox‐Active Vanadium‐Based Polyoxometalate as an Active Element in Resistive Switching Based Nonvolatile Molecular Memory

Sterin N. S., Nivedita Basu, Marc Cahay, Satyanarayan M. N., Sib Sankar Mal, Partha Pratim Das

physica status solidi (a)· Volume 217· Issue 18
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Source abstract

Abstract

Nonvolatile Molecular Memory In article number 2000306, Sib Sankar Mal, Partha Pratim Dasa and co-workers attempt to build ultrafast and nonvolatile molecular memory using highly redox-active vanadium based polyoxometalate (POM) clusters. POMs are large reservoir of electrons and they can undergo fast reduction–oxidation process through electron delocalization around its molecular cage. The results presented in this study demonstrate the ability of POMs as an active element to fabricate resistive random-access memory (RRAM) for high-density data-storage applications.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Molecular Sensors and Ion Detection · Polyoxometalates: Synthesis and Applications

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Affiliations

Low Dimensional Physics Laboratory Department of Physics National Institute of Technology Mangalore 575025 Karnataka India

Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India

Spintronics and Vacuum Nanoelectronics Laboratory University of Cincinnati Cincinnati OH 45040 USA

Optoelectronics Laboratory Department of Physics National Institute of Technology Mangalore 575025 Karnataka India

Materials and Catalysis Laboratory Department of Chemistry National Institute of Technology Mangalore 575025 Karnataka India

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