Reduction of Native Singly Ionized Zinc Vacancies Content by 2.5 MeV Electron Irradiation of ZnGeP2Single Crystals
Source abstract
Abstract
An experimental study on how to reduce the content of singly ionized zinc vacancy (V−Zn) in ZnGeP2crystals to improve their optical quality is presented. Their electron paramagnetic resonance signal has been studied in samples treated in different ways. The data provide a scheme of the reductions that can be obtained by the different methods or by their combinations. The adding of Sn during the synthesis phase helps the production of large‐size single crystals and the reduction of the V−Zncontent. Thermal treatment and electron irradiation are then needed for further reduction. At the fluence of 2 × 1017e cm−2, the V−Zndecrease does not reach a minimum value, so with higher fluences, additional reduction of V−Zncontent is expected.
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Research context
OpenAlex topics: Semiconductor materials and devices · Photorefractive and Nonlinear Optics · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
DMAS/ONERA Université Paris‐Saclay F‐92322 Chatillon France
LSI, CEA/DRF/IRAMIS, CNRS Ecole Polytechnique, Institut Polytechnique de Paris 91120 Palaiseau France
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