Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process
Source abstract
Abstract
Herein, an alternative approach of selective‐area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p‐type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective‐area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near‐infrared back‐illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high‐performance planar InGaAs/InP APD focal plane arrays.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Advanced Optical Sensing Technologies · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China
Funding
Ministry of Science and Technology of the People's Republic of China
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