GaN‐based ultraviolet light‐emitting diodes with multifinger contacts

Abstract GaN‐based ultraviolet light‐emitting diodes with identical contact areas but different contact shapes are studied. Interdigitated multifinger contacts with reduced finger width result in a lower series resistance and a thermal roll‐over of the output power at higher cw currents in comparison to square‐shaped contacts. Under pulsed operation, the external quantum efficiency in these devices is increased due to a reduction of the efficiency droop at elevated currents. Simulations of the current distribution explain the experimental data with an improved uniformity of the current density in multifinger contacts as current crowding at the contact edges is largely suppressed.