Uniform III‐nitride growth in single wafer horizontal MOVPE reactors

H. Hardtdegen; N. Kaluza; R. Steins; P. Javorka; K. Wirtz; A. Alam; T. Schmitt; R. Beccard

doi:10.1002/pssa.200461468

journal article·2005-04

Uniform III‐nitride growth in single wafer horizontal MOVPE reactors

H. Hardtdegen, N. Kaluza, R. Steins, P. Javorka, K. Wirtz, A. Alam, T. Schmitt, R. Beccard

physica status solidi (a)· Volume 202· Issue 5

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Abstract

Abstract Using a new susceptor set‐up a systematic study on gas phase transport properties was carried out with the aim of obtaining layer uniformity. By determining the influence of the transport parameters on growth it is then possible to achieve symmetric growth profiles and highly uniform GaN and AlGaN layers as well as heterostructures exhibiting a high material quality with respect to their structural and electrical properties. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Silicon Carbide Semiconductor Technologies

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References (6)

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1. 10.1016/j.jcrysgro.2004.02.06410.1016/j.jcrysgro.2004.02.064 ↗

2. 10.1016/S0022-0248(00)00970-210.1016/S0022-0248(00)00970-2 ↗

3. 10.1016/S0022-0248(00)00969-610.1016/S0022-0248(00)00969-6 ↗

4. 10.1016/S0921-5093(00)01347-210.1016/S0921-5093(00)01347-2 ↗

5. 10.1149/1.212393910.1149/1.2123939 ↗

6. K. F.Jensen Transport Phenomena in Vapor Phase Epitaxy Reactors Vol. 3 (Thin Films and Epitaxy Part B: Growth Mechanisms and Dynamics) D. T. J. Hurle (Elsevier Science B.V. Amsterdam 1994).