Reactive magnetron sputtering of highly (001)‐textured WS_2−x films: Influence of Ne⁺, Ar⁺ and Xe⁺ ion bombardment on the film growth

Abstract Tungsten disulfide WS₂ is a layer‐type semi‐conductor with an energy band gap and an absorption coefficient making it suitable as an absorber for thin film solar cells. In the article [1] WS_2–x films were pre‐pared by reactive magnetron sputtering from a metallic tungsten target in Ar–H₂S atmospheres. The cover figure shows in situ energy‐dispersive X‐ray diffraction patterns for films deposited at different substrate potentials, i.e. for deposition conditions with ion assistance at different ion energies. These spectra and the corresponding SEM photographs of the film morphology show the strong influence of the ion energy on the film growth. The crystallographic struc‐ture of WS_2–x is shown between the two SEM pictures. The first author, Klaus Ellmer, is working at the Hahn‐Meitner‐Institut Berlin, Dept. of Solar Energy Research. His research fields are thin film deposition by reactive magnetron sputtering for solar cells, plasma characterization, in situ energy‐dispersive X‐ray diffraction and electronic transport in transpar‐ent conductive oxides.