Effect of annealing temperature on the electrical transport properties of CaRuO_3–δ thin films directly deposited on the Si substrate

Abstract We investigate the effect of annealing temperature on the preferentially (110)‐oriented CaRuO_3–δ (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post‐annealing treatment. It was obvious that 700 °C post‐annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru⁴⁺/Ca²⁺ ion were responsible for the transport properties of CRO thin film. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)