Surface chemical and electronic properties of plasma‐treated n‐type Al0.5Ga0.5N
Source abstract
Abstract
Abstract The effects of plasma treatment on the surface properties of Si‐doped Al0.5Ga0.5N were studied by X‐ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N‐deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion‐induced compensating defects. Pre‐metal plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current–voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al0.5Ga0.5N even at 300 °C. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
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References (19)
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