Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films
Source abstract
Abstract
Reactive pulsed DC magnetron co‐sputtering is used to grow piezoelectric aluminum nitride (AlN) and aluminum scandium nitride (AlScN) thin films on Si(001) substrates. By using grazing incidence X‐ray diffraction (GIXRD), scanning electron microscopy (SEM), and piezoresponse force microscopy (PFM), we investigate how the microstructure and the presence of misoriented grains affect the piezoelectric properties of the material. N2concentration and target‐to‐substrate distance are finely tuned to achieve thin films without misoriented grains, resulting in Al0.87Sc0.13N thin films with low roughness, high degree ofc‐axis orientation, homogenous polarity, and piezoelectric coefficientd33 = −12.3 pC/N.
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Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics
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Affiliations
Fraunhofer Institute for Applied Solid State Physics IAF Tullastraße 72 79108 Freiburg Germany
Laboratory for Compound Semiconductor Microsystems IMTEK‐Department of Microsystems Engineering University of Freiburg Georges‐Koehler‐Allee 103 79110 Freiburg Germany
Funding
Fraunhofer Attract
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