DataVXphysica status solidi (a)Paper
journal article·2006-05

New method for the in situ determination of AlxGa1–xN composition in MOVPE by real‐time optical reflectance

H. Hardtdegen, N. Kaluza, Z. Sofer, Y. S. Cho, R. Steins, H. L. Bay, Y. Dikme, H. Kalisch, R. H Jansen, M. Heuken, A. Strittmatter, L. Reißmann, D. Bimberg, J.‐T. Zettler

physica status solidi (a)· Volume 203· Issue 7
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Source abstract

Abstract

Abstract This paper reports on the in situ determination of the Al‐content in Alx Ga1–x N layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the dependence of the refractive index and the extinction coefficient on Al‐content is compared to that of the new dispersion approach. The limits and possibilities of the new approach will be discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Surface Roughness and Optical Measurements · Semiconductor materials and devices

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References (5)

Show source-provided references
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4. H.Hardtdegen M.Zorn andJ.‐T.Zettler Proc. 12th Internat. Workshop on the Physics of Semiconductor Devices edited by K. N. Bhat and A. DasGupta (Narosa Publ. House New Delhi 2004) pp. 3–89.
5. 10.1016/S0022-0248(01)01254-410.1016/S0022-0248(01)01254-4 ↗