DataVXphysica status solidi (a)Paper
journal article·2011-07Open access

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert (Kejia) Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly, Guowang Li, Kamal Karda, Vladimir Protasenko, Chuanxin Lian, Thomas Kosel, Patrick Fay, Huili Xing

physica status solidi (a)· Volume 208· Issue 7
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Source abstract

Abstract

Abstract The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices

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