Annealing and LEEBI Effects on the Stacking Fault Expansion and Shrinking in 4H‐SiC

The expansion of generated by indentation Shockley‐type stacking faults (SSFs) due to e‐beam irradiation is studied. It is shown that SSFs can expand even outside the irradiation region. The dislocation velocity is independent of SSF size and practically linear increases with beam current. These results allow to conclude that the dislocation glide is enhanced by the excess carrier recombination. It is shown that the driving force for the SSF expansion is mainly determined by the energy gain due to electron capture into quantum wells associated with SSFs.