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journal article·2020-02

Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer

Mizuho Hiraoka, Yuki Endoh, Koki Osawa, Naoyuki Kishimoto, Takuya Hayashi, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu, Akira Endoh, Hiroki I. Fujishiro

physica status solidi (a)· Volume 217· Issue 3
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Abstract

Unstrained Ga1–xInxSb quantum well (QW) channel using strained‐Al0.40In0.60Sb/Al1–yInySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1–xInxSb QW is lattice‐matched to the Al1–yInySb lower buffer layer. Sheet electron density (Ns) of Ga1–xInxSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In contentxof Ga1–xInxSb. Unstrained Ga0.22In0.78Sb QW channel using strained‐Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer hasNsof 2.05 × 1012 cm−2andμof 15 500 cm2 V−1 s−1. Compared with the InSb QW channel,Nsincreases by a factor of 193% andμdecreases to 87%. Consequently, the sheet resistance decreases to 59%. These results indicate that the unstrained Ga1–xInxSb QW channel using strained‐Al0.40In0.60Sb/Al1–yInySb stepped buffer is effective to improve the electron transport properties.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Electronics Tokyo University of Science 6-3-1, Niijuku, Katsushika-ku Tokyo 125-8585 Japan

National Institute of Info. & Com. Tech. (NICT) 4-2-1, Nukui-Kitamachi, Koganei-shi Tokyo 184-8795 Japan

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