Three‐dimensional ordering in self‐organized (In,Ga)As quantum dot multilayer structures
Source abstract
Abstract
Abstract Molecular beam epitaxy (MBE) grown In0.5Ga0.5As/GaAs multilayer structures with quantum dots chains (QDs), obtained under different growth conditions, were investigated by high‐resolution X‐ray diffractometry (HRXRD) and AFM. It was determined that self‐organized epitaxial growth of In0.5Ga0.5As/GaAs can lead to the formation of three‐dimensional quantum‐dot crystals with triclinic (distorted cubic) unit cell. The mechanisms of QDs ordering in dependence on As flux are analyzed.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
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