Green light‐emitting diodes fabricated on semipolar (11–22) GaN on r‐plane patterned sapphire substrate

Abstract We have succeeded in the growth of a high‐quality semipolar (11–22) GaN layer on an r‐plane patterned sapphire substrate (r‐PSS). In this study, we report on green‐light‐emitting diodes (LEDs) fabricated on the (11–22) GaN layer on the r‐PSS. The optical property of (11–22) MQWs on the r‐PSS improved from that of the same MQWs on an m‐plane sapphire substrate. The green light emission from the LED on the r‐PSS was confirmed, which exhibited scattered light emission. The effect of the r‐PSS on the improvement of light extraction was evaluated by ray tracing simulation, which is higher than that of a conventional LED on a c‐PSS. This improvement is derived from the air void structure in the LED fabricated on the r‐PSS. It was also confirmed that the LED had a small blue shift compared with that on the conventional green LED, and that the quantum confined Stark effect can be reduced using the semipolar (11–22) GaN layer on the r‐PSS.