MOVPE homoepitaxial growth on vicinal GaN(0001) substrates

Abstract Homoepitaxial growth of GaN by metal organic vapor phase epitaxy (MOVPE) was systematically evaluated using nominal c‐plane and various vicinal GaN(0001) wafers: 1°, 2°, 4°, and 8° offcut in the directions of 〈10$\bar 1$0〉 and 〈11$\bar 2$0〉. It was found that a hillock morphology formed on the nominal c‐plane substrate whereas smooth epi films were formed on vicinal substrates. Silicon‐doped films showed similarly improved surface morphology with offcut angle, however Mg‐doped films exhibited a rougher microstructure. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)