Low frequency noise in InGaN/GaN MQW‐based photodetector structures
Source abstract
Abstract
Abstract Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/f ‐type noise was examined in MQW PDs as a function of reverse bias, In content and temperature. Superposed multilevel Random Telegraph Signal Noise was observed under reverse and forward biases. The dominant presence of this type of noise in MQW PCs seems to indicate that its origin was related to localization effects in the InGaN QWs. Detectivity of the MQW PDs was determined at various voltages for a wide range of temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Terahertz technology and applications
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References (6)
Show source-provided references
1. 10.1109/JQE.2005.85980810.1109/JQE.2005.859808 ↗
2. 10.1109/JQE.2003.81026210.1109/JQE.2003.810262 ↗
3. 10.1016/j.spmi.2004.09.04010.1016/j.spmi.2004.09.040 ↗
4. 10.1364/AO.45.00749810.1364/AO.45.007498 ↗
5. 10.1063/1.194262810.1063/1.1942628 ↗
6. 10.1063/1.146798310.1063/1.1467983 ↗