Photoluminescence associated with {113} defects in oxygen‐implanted silicon

The dependences of photoluminescence (PL) and the structure of {113} defects induced in n‐Cz‐Si (100) wafers by implantation of 350 keV O⁺ ions at a dose of 3.7 × 10¹⁴ cm⁻² on the annealing time at 700 °C for 0.5–2.0 h in a chlorine‐containing atmosphere have been studied in detail. Extended defects were examined by high‐resolution transmission electron microscopy (HRTEM) on cross‐sectional samples. HRTEM evidences that {113} defects dominate in all the samples under study. A shift of the PL band from 920 to 903 meV (“903” line, R‐line, or 1370 nm line) was observed with increasing annealing time, which suggests a strong change of the {113} defect structure. According to the Geometrical Phase Method used for the measurements of lattice deformations around the {113} defects observed by HRTEM, this change is related to a transformation of a vacancy‐type {113} defect to an interstitial one. The effect of the measurement temperature on the main parameters of R‐line has been studied, too. A sample annealed for 1 h has some characteristic features of the temperature dependence of the PL intensity: it increases with activation energy of 19.1 meV at low temperatures and decreases with deactivation energies of 32.2 and 175.5 meV at higher temperatures. With the increasing temperature, the luminescence peak shifts by the same energy as the forbidden gap width, while the FWHM of the line grows linearly.