Customized 2D Structures for High Throughput Electromigration Measurements
Source abstract
Abstract
Customized 2D wires are designed for high throughput electromigration testing on model Al and Cu thin films. Two direct writing approaches for defining the 2D wires are compared with photolithography. Electromigration effects on Al and Cu thin films are studied on 2D wires obtained applying both methods. A self‐developed four‐point probe is used to apply current through the test wires while measuring the potential drop along the wires. Photolithography is selected as the main method to outline the wires in order to have reproducible results in a high throughput manner. The errors of electromigration assessment are empirically evaluated by analyzing the data scattering for a large number of measured 2D wires. Inductively coupled plasma optical emission spectrometry (ICP‐OES) is performed on the photoresist removal solution before and after the lift‐off process. No traces of metallic elements are detected in both cases confirming the proposed mechanism.
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Research context
OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Electronic Packaging and Soldering Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Chemical Technology of Inorganic Materials Johannes Kepler University Linz Altenberger Str. 69 4040 Linz Austria
CEST Competence Center for Electrochemical Surface Technology Altenberger Str. 69 4040 Linz and Viktor Kaplan Str. 2 2700 Wiener Neustadt Austria
EV Group E. Thallner GmbH DI Erich Thallner Str. 1 4782 St. Florian am Inn Austria
Funding
FFG
References (26)
Show source-provided references
1. Seith W. · Z. Elektrochem · 1953 · 57 · 891
2. Fiks V. B. · Sov. Phys.‐Solid State · 1959 · 1 · 14
3. 10.1088/0034-4885/52/3/00210.1088/0034-4885/52/3/002 ↗
4. 10.1063/1.161126310.1063/1.1611263 ↗
5. 10.1063/1.34752910.1063/1.347529 ↗
6. 10.1109/PROC.1969.734010.1109/PROC.1969.7340 ↗
7. 10.1002/qre.468011041210.1002/qre.4680110412 ↗
8. 10.1063/1.35773410.1063/1.357734 ↗
9. 10.1109/EDL.1982.2546010.1109/EDL.1982.25460 ↗
10. 10.1063/1.10574510.1063/1.105745 ↗
11. 10.1002/pssa.20062245510.1002/pssa.200622455 ↗
12. 10.1063/1.32284210.1063/1.322842 ↗
13. 10.1002/1521-4079(200007)35:6/7<721::AID-CRAT721>3.0.CO;2-210.1002/1521-4079(200007)35:6/7<721::AID-CRAT721>3.0.CO;2-2 ↗
14. 10.1147/rd.394.046510.1147/rd.394.0465 ↗
15. 10.1016/j.tsf.2017.05.04410.1016/j.tsf.2017.05.044 ↗
16. 10.1109/55.21518310.1109/55.215183 ↗
17. 10.1063/1.12397410.1063/1.123974 ↗
18. 10.1088/1468-6996/15/1/01500610.1088/1468-6996/15/1/015006 ↗
19. 10.1002/pssa.20120078110.1002/pssa.201200781 ↗
20. 10.1002/jsid.52210.1002/jsid.522 ↗
21. Frye R. · 2012 · 130410.1109/ECTC.2012.6249004 ↗
22. Zhu Z. · 2017 · 1
23. 10.1063/1.496366910.1063/1.4963669 ↗
24. 10.1016/j.actamat.2016.06.05910.1016/j.actamat.2016.06.059 ↗
25. 10.1007/s12274-016-0998-910.1007/s12274-016-0998-9 ↗
26. 10.1016/S1388-2481(01)00260-010.1016/S1388-2481(01)00260-0 ↗