On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

For the realization of high breakdown voltages in power electronics, a low‐cost technology is developed, which allows the deep diffusion of aluminum from a physically deposited source. The approach requires only standard process steps that are already established in the manufacturing of silicon power devices. The sheet concentration of the diffusion profiles exceeds, with 8 10¹³ cm⁻², the ones of comparable implanted and annealed profiles by up to a factor of two. A full numerical analysis of the resulting profiles is provided.