journal article·2024-07-09

Superconductivity in thin films of RuN

A. S. Ilin, A. O. Strugova, I. A. Cohn, V. V. Pavlovskiy, S. V. Zaitsev-Zotov, A. V. Sadakov, O. A. Sobolevskiy, L. A. Morgun, V. P. Matrovitskii, G. V. Rybalchenko

Physical Review Materials· Volume 8· Issue 7
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Abstract

Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This novel member of the metal nitride superconductors family has a critical temperature of the superconducting transition that varies depending on the substrate, ranging from 0.77 K to 1.29 K. The parameters of the crystal lattice of the superconducting films have been determined: The lattice is cubic with rhombohedral distortion along the normal to substrate surface with parameters $a=b=c=4.559\phantom{\rule{0.16em}{0ex}}\mathrm{\AA{}}$ for $\mathrm{RuN}/{\mathrm{SiO}}2$, $a=b=c=4.536\phantom{\rule{0.16em}{0ex}}\mathrm{\AA{}}$ for RuN/Si, and $\ensuremath{\alpha}=\ensuremath{\beta}=\ensuremath{\gamma}=87.{96}^{\ensuremath{\circ}}$ for both films. The upper critical magnetic field at zero temperature ${H}c2(0)=2.3--4.1\phantom{\rule{0.16em}{0ex}}\mathrm{T}$ found by extrapolation our experimental data collected at $T⪆0.8$ to zero temperature using the WHH model is near the upper paramagnetic limit. An $s$-wave single-band energy gap of $\mathrm{\ensuremath{\Delta}}(0)=0.19\phantom{\rule{0.16em}{0ex}}\mathrm{meV}$ was revealed by self-field critical current experiment at temperatures down to 10 mK.
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Research context

OpenAlex topics: Rare-earth and actinide compounds · Boron and Carbon Nanomaterials Research · High-pressure geophysics and materials

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Affiliations

Kotelnikov Institute of Radioengineering and Electronics of RAS

HSE

P. N. Lebedev Physical Institute

Funding

Russian Science Foundation · Russian Academy of Sciences

References (34)

Show source-provided references
1. 10.1039/D0CS00415D10.1039/D0CS00415D ↗
2. 10.1109/TMAG.1985.106365810.1109/TMAG.1985.1063658 ↗
3. 10.1038/nmat111510.1038/nmat1115 ↗
4. 10.1016/j.jpcs.2007.06.00210.1016/j.jpcs.2007.06.002 ↗
5. 10.3390/s9040247810.3390/s90402478 ↗
6. 10.1149/1.353782510.1149/1.3537825 ↗
7. 10.1016/j.scriptamat.2013.01.03010.1016/j.scriptamat.2013.01.030 ↗
8. 10.1016/j.apsusc.2014.09.15810.1016/j.apsusc.2014.09.158 ↗
9. 10.1016/j.surfcoat.2015.10.01910.1016/j.surfcoat.2015.10.019 ↗
10. 10.1016/j.cpc.2019.10704210.1016/j.cpc.2019.107042 ↗
11. 10.1186/s40679-018-0060-y10.1186/s40679-018-0060-y ↗
12. 10.1016/j.jallcom.2010.03.17610.1016/j.jallcom.2010.03.176 ↗
13. 10.1038/srep3350610.1038/srep33506 ↗
14. 10.1103/PhysRevB.12.90510.1103/PhysRevB.12.905 ↗
15. 10.1088/0953-8984/21/39/39550210.1088/0953-8984/21/39/395502 ↗
16. 10.1103/PhysRevB.80.13451410.1103/PhysRevB.80.134514 ↗
17. 10.1103/PhysRevLett.13.68610.1103/PhysRevLett.13.686 ↗
18. 10.1103/PhysRev.147.28810.1103/PhysRev.147.288 ↗
19. 10.1103/PhysRev.147.29510.1103/PhysRev.147.295 ↗
20. 10.1038/ncomms882010.1038/ncomms8820 ↗
21. 10.1002/andp.20170019710.1002/andp.201700197 ↗
22. 10.1038/s41598-019-50687-y10.1038/s41598-019-50687-y ↗
23. 10.1002/andp.20160039010.1002/andp.201600390 ↗
24. 10.1002/advs.20230362210.1002/advs.202303622 ↗
25. 10.1021/acs.jpclett.3c0157710.1021/acs.jpclett.3c01577 ↗
26. 10.1007/s10948-017-4295-y10.1007/s10948-017-4295-y ↗
27. 10.1103/PhysRevLett.43.125610.1103/PhysRevLett.43.1256 ↗
28. 10.1103/PhysRevLett.9.26610.1103/PhysRevLett.9.266 ↗
29. 10.1063/1.177736210.1063/1.1777362 ↗
30. 10.1103/PhysRevB.39.421010.1103/PhysRevB.39.4210 ↗
32. 10.1103/PhysRevB.22.426410.1103/PhysRevB.22.4264 ↗
33. 10.1016/S0921-4534(01)00929-710.1016/S0921-4534(01)00929-7 ↗
34. 10.1088/1361-6633/80/3/03650110.1088/1361-6633/80/3/036501 ↗