Large-scale interlayer rotations and Te grain boundaries in (Bi,Sb)2Te3 thin films
Source abstract
Abstract
We report the observation of two distinct large-scale defects in ${(\mathrm{Bi},\mathrm{Sb})}2\mathrm{T}{\mathrm{e}}3$ topological insulator (TI) thin films grown by molecular beam epitaxy. Small-angle rotations are detected between quintuple layers of the TI film, extending throughout a grain and beyond, and nm-sized Te formations are discovered that extend along grain boundaries. Density functional theory calculations suggest that the rotational defects can affect the local band structure of the film while preserving spin-momentum locking in the Dirac bands, and that the Te nanostructures at grain boundaries can result in wider-band-gap regions between the grains.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
Funding
National Institute of Standards and Technology · National Science Foundation
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