Direct orientation contrast imaging of antiphase domains on III-V materials using scanning electron microscopy
Source abstract
Abstract
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries.
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Research context
OpenAlex topics: Advanced Electron Microscopy Techniques and Applications · Electron and X-Ray Spectroscopy Techniques · Optical Coatings and Gratings
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Univ Rennes
INSA Rennes
CNRS
FOTON, UMR 6082
Centre de Nanosciences et de Nanotechnologies
Thales
III-V Lab
IHP-Leibniz Institut für Innovative Mikroelektronik
Funding
Agence Nationale de la Recherche · European Commission · European Regional Development Fund · Région Bretagne
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