journal article·2026-07-20Open access

Direct orientation contrast imaging of antiphase domains on III-V materials using scanning electron microscopy

Brieg Le Corre, Clothilde Grenèche, Rozenn Bernard, Tony Rohel, Antoine Létoublon, Wijden Khelifi, Julie Le Pouliquen, Arnaud Grisard, Sylvain Combrié, Bruno Gérard, Abdelmounaim Harouri, Luc Le Gratiet, Grégoire Beaudoin, Konstantinos Pantzas, Isabelle Sagnes, Oliver Skibitzki, Gilles Patriarche, Charles Cornet, Yoan Léger

Physical Review Materials· Volume 10· Issue 7

Abstract

Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries.
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Research context

OpenAlex topics: Advanced Electron Microscopy Techniques and Applications · Electron and X-Ray Spectroscopy Techniques · Optical Coatings and Gratings

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Univ Rennes

INSA Rennes

CNRS

FOTON, UMR 6082

Centre de Nanosciences et de Nanotechnologies

Thales

III-V Lab

IHP-Leibniz Institut für Innovative Mikroelektronik

Funding

Agence Nationale de la Recherche · European Commission · European Regional Development Fund · Région Bretagne

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