Magnetic proximity effects in topological insulator heterostructures: Implementation and characterization

Introducing magnetism into topological insulators is critical for realizing exciting quantum transport effects. Higher magnetic ordering temperatures are urgently needed, ideally without increased defect levels in the materials. While both intrinsic magnetic topological insulators and those synthesized through magnetic doping have been highly successful at low-temperatures, magnetic proximity effects are viewed as a potential route towards higher temperature quantum transport. In this research update, the authors highlight recent approaches in introducing magnetic order in topological insulators through interfacing with various magnetic materials, focusing particularly on techniques for characterizing magnetic proximity effects and their applications in (Bi,Sb)${}₂$(Se,Te)${}₃$ based systems.