Superconductivity in Sn1−xInxTe thin films grown by molecular beam epitaxy

The superconductor ${\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{In}}_x\mathrm{Te}$ is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such samples would be useful for addressing the nature of its superconductivity. Here we report the successful molecular beam epitaxy growth of superconducting ${\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{In}}_x\mathrm{Te}$ films by using ${\mathrm{Bi}}₂{\mathrm{Te}}₃$ as a buffer layer. The data obtained from tunnel junctions made on such films show the appearance of two superconducting gaps, which points to the coexistence of bulk and surface superconductivity. Given the spin-momentum locking of the surface states, the surface superconductivity is expected to be topological with an effective $p$-wave character. Since the topological surface states of SnTe consist of four Dirac cones, this platform offers an interesting playground for studying topological surface superconductivity with additional degrees of freedom.