Electron-optical phonon scattering in doped GaAs quantum well

The influence of the presence of free electrons on the spectra of optical phonons and on electron-optical phonon scattering in quantum wells has been theoretically studied. As an example, calculations of the optical phonon spectra, intrasubband and intersubband electron-optical phonon scattering in 10-nm-GaAs quantum wells surrounded by ${\mathrm{Al}}_0.3{\mathrm{Ga}}_0.7\mathrm{As}$ barriers were carried out at two temperatures of 77 and 300 K. It was shown that the frequency of intrasubband scattering varies nonmonotonically with increasing electron concentration in the quantum well. The relaxation rates of the wave vector and energy for scattering in the first and second subbands are found. It is shown that with increasing electron concentration in the quantum well, the frequency of intersubband scattering decreases.