journal article·2018-05-25Open access

Geometrically frustrated trimer-based Mott insulator

Loi T. Nguyen, T. Halloran, Weiwei Xie, Tai Kong, C. L. Broholm, R. J. Cava

Physical Review Materials· Volume 2· Issue 5

Abstract

The crystal structure of $\mathrm{B}{\mathrm{a}}4\mathrm{NbR}{\mathrm{u}}3{\mathrm{O}}12$ is based on triangular planes of elongated $\mathrm{R}{\mathrm{u}}3{\mathrm{O}}12$ trimers oriented perpendicular to the plane. We report that it is semiconducting, that its Weiss temperature and effective magnetic moment are \ensuremath{-}155 K and $2.59\phantom{\rule{0.16em}{0ex}}{\ensuremath{\mu}}_{\mathrm{B}}/\mathrm{f}.\mathrm{u}.$, respectively, and that the magnetic susceptibility and specific-heat data indicate that it exhibits magnetic ordering near 4 K. The presence of a high density of low energy states is evidenced by a substantial Sommerfeld-like T-linear term $\mathrm{[}\ensuremath{\gamma}=31(2)\phantom{\rule{0.16em}{0ex}}\mathrm{mJ}\phantom{\rule{0.16em}{0ex}}\mathrm{mo}{\mathrm{l}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{K}}^{\ensuremath{-}2}]$ in the specific heat. Electronic-structure calculations reveal that the electronic states at the Fermi energy reside on the $\mathrm{R}{\mathrm{u}}3{\mathrm{O}}12$ trimers and that the calculated density of electronic states is high and continuous around the Fermi energy---in other words density functional theory calculates the material to be a metal. The results imply that $\mathrm{B}{\mathrm{a}}4\mathrm{NbR}{\mathrm{u}}3{\mathrm{O}}12$ is a geometrically frustrated trimer-based Mott insulator.
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OpenAlex topics: Advanced Condensed Matter Physics · Physics of Superconductivity and Magnetism · Iron-based superconductors research

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References (27)

Show source-provided references
1. 10.1119/1.152270410.1119/1.1522704 ↗
2. J. M. D. Coey · 2009
3. R. H. McKenzie · Condens. Concepts · 2010
4. 10.1103/PhysRevB.87.18442310.1103/PhysRevB.87.184423 ↗
5. 10.1146/annurev.ms.24.080194.00232110.1146/annurev.ms.24.080194.002321 ↗
6. 10.1103/PhysRevB.79.06050110.1103/PhysRevB.79.060501 ↗
7. 10.7566/JPSJ.82.12370210.7566/JPSJ.82.123702 ↗
8. 10.1063/1.491831010.1063/1.4918310 ↗
9. 10.1038/372532a010.1038/372532a0 ↗
10. 10.1021/ic50043a02310.1021/ic50043a023 ↗
11. 10.1103/PhysRevB.91.19514910.1103/PhysRevB.91.195149 ↗
12. 10.1021/cm800708g10.1021/cm800708g ↗
13. 10.1016/j.jssc.2009.10.00710.1016/j.jssc.2009.10.007 ↗
14. 10.1073/pnas.160636711310.1073/pnas.1606367113 ↗
15. 10.1103/PhysRevB.95.18442410.1103/PhysRevB.95.184424 ↗
16. 10.1016/0022-3697(80)90182-110.1016/0022-3697(80)90182-1 ↗
17. 10.1006/jssc.1994.131610.1006/jssc.1994.1316 ↗
18. 10.1107/S002188980100224210.1107/S0021889801002242 ↗
19. 10.1107/S002188981103897010.1107/S0021889811038970 ↗
20. J. Ren · 1998
21. 10.1063/1.173445610.1063/1.1734456 ↗
22. 10.1016/0022-4596(84)90321-910.1016/0022-4596(84)90321-9 ↗
23. 10.3891/acta.chem.scand.24-011610.3891/acta.chem.scand.24-0116 ↗
24. 10.1021/ic00157a00810.1021/ic00157a008 ↗
25. 10.1006/jssc.2002.953810.1006/jssc.2002.9538 ↗
26. 10.1103/PhysRevB.86.06440810.1103/PhysRevB.86.064408 ↗
27. 10.1103/PhysRevB.45.250510.1103/PhysRevB.45.2505 ↗