Control of band structure of FeSe single crystals via biaxial strain

We performed systematic transport measurements on FeSe single crystals with applying in-plane biaxial strain $\ensuremath{\varepsilon}$ ranging from $\ensuremath{-}0.96%$ to 0.23%. Biaxial strain was introduced by firmly gluing samples to various substrate materials with different thermal expansion. With increasing $\ensuremath{\varepsilon}$, structural and superconducting transition temperatures monotonically increased and decreased, respectively. We analyzed magnetotransport results using a compensated three-carrier model. The evaluated densities of hole and electron carriers systematically changed with strain. This indicates that we succeeded in controlling the band structure of single-crystalline FeSe.