Erratum: Signature of Hanle precession in trilayer MoS2 : Theory and experiment [Phys. Rev. B 95 , 174428 (2017)]
Source abstract
Abstract
Received 21 December 2017Corrected 1 October 2018DOI:https://doi.org/10.1103/PhysRevB.97.099902©2018 American Physical SocietyPhysics Subject Headings (PhySH)Physical SystemsThin filmsTransition metal dichalcogenidesTechniquesFilm depositionResistivity measurementsk dot p methodCondensed Matter, Materials & Applied Physics
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films
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