Incorporation of ZnSnN₂ and InN δ-layers in InGaN/GaN Quantum Wells: Toward efficient long-wavelength III-nitride LEDs
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (62)
Show source-provided references
1. Unusual properties of the fundamental band gap of InN10.1063/1.1482786 ↗
2. When group-III nitrides go infrared: new properties and perspectives10.1063/1.3155798 ↗
3. Monolithically integrating III-nitride quantum structure for full-spectrum white LED via bandgap engineering heteroepitaxial growth10.1002/lpor.202200455 ↗
4. High-power AlGaN-based ultrathin tunneling junction deep ultraviolet light-emitting diodes10.1002/lpor.202300464 ↗
5. "Highly efficient GaN-based high-power flip-chip light-emitting diodes10.1364/OE.27.00A669 ↗
6. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes10.1364/OL.452477 ↗
7. "Application of patterned sapphire substrate for III-nitride light-emitting diodes10.1039/D1NR08221C ↗
8. Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft10.1038/s41378-024-00737-x ↗
9. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes10.1103/RevModPhys.87.1139 ↗
10. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs10.7567/APEX.10.032101 ↗
11. Confocal electroluminescence investigations of highly efficient green InGaN LED via ZnO nanorods10.1016/j.jallcom.2015.11.151 ↗
12. and Mun Seok Jeong: Ultraviolet, blue, and green InGaN-based light-emitting diodes functionalized with ZnO nanorods10.1016/j.jallcom.2017.03.028 ↗
13. Optical properties of nitride quantum wells: how to separate fluctuations and polarization field effects10.1002/(SICI)1521-3951(199911)216:1<427::AID-PSSB427>3.0.CO;2-K ↗
14. Direct measurement of auger recombination in In 0.1 Ga 0.9 N/GaN quantum wells and its impact on the efficiency of In 0.1 Ga 0.9 N/GaN multiple quantum well light emitting diodes10.1063/1.3266520 ↗
15. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells10.1063/1.3012388 ↗
16. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes10.1063/1.3668117 ↗
17. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes10.1063/1.3493188 ↗
18. Nelson, InGaN/Dilute-As GaNAs interface quantum well for red emitters10.1038/srep19271 ↗
19. Red light emitting diodes based on the type-II InGaN-ZnSnN2/GaN quantum wells10.1016/j.mssp.2018.03.030 ↗
20. Effect of Sb incorporation on electroluminescence of InGaAsSbN quantum well diodes grown on GaAs substrates10.1143/JJAP.47.6302 ↗
21. InP-based InGaAsSbN quantum well laser diodes in the 2-μm wavelength region10.1002/ecj.10195 ↗
22. 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE10.1016/j.jcrysgro.2011.12.075 ↗
23. Development of InGaN-based red LED grown on (0001) polar surface10.7567/APEX.7.071003 ↗
24. Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter10.1063/1.4895067 ↗
25. single-quantum-well red lightemitting diodes with a low forward voltage
26. Near infrared photonic devices based on Er-doped GaN and InGaN10.1016/j.optmat.2010.10.002 ↗
27. Energy difference between electron subbands in AlInN∕ GaInN quantum wells studied by contactless electroreflectance spectroscopy10.1063/1.2420784 ↗
28. Near-infrared InGaN nanocolumn Light-emitting diodes operated at 1.46 μm
29. Enhanced quantum efficiency of horizontally aligned individual InGaN/ GaN nanorod LEDs by self-assembled Ag nanoparticles10.1016/j.apsusc.2024.159706 ↗
30. High-performance red-emitting InGaN/AlGaN nanowire light-emitting diodes grown through porous template
31. Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy, ACS Appl. Electron
32. Analysis of InGaN-delta-InN quantum wells on InGaN substrates for red light emitting diodes and lasers10.1109/JPHOT.2021.3053484 ↗
33. Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission10.1109/JQE.2022.3142270 ↗
34. Lambrecht, Band offsets between ZnGeN2, GaN, ZnO, and ZnSnN2 and their potential impact for solar cells10.1103/PhysRevB.88.075302 ↗
35. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates10.1002/pssa.200723591 ↗
36. I.E. Fragkos, et al., Pulse MOVPE growth studies of InN and its integration into InGaN quantum wells for long-wavelength emission, Proceedings of ICMOVPE XIX, Osaka, Japan (2018).10.1109/IPCon.2018.8527290 ↗
37. Experimental studies of delta-InN incorporation in InGaN quantum wells for long-wavelength emission
38. Kinetic Model for Ternary III-Nitride Epitaxy: The Role of Vertical Segregation on Phase Separation10.1021/acs.cgd.3c00946 ↗
39. Growth temperature dependent critical thickness for phase separation in thick (∼1μm) InxGa1−xN (x=0.2–0.4)10.1016/j.jcrysgro.2015.02.100 ↗
40. Critical thickness as a function of the indium molar fraction in cubic InxGa1-xN and the influence in the growth of nanostructures10.1016/j.mssp.2020.105101 ↗
41. Review of ZnSnN2 semiconductor material10.1088/2515-7655/ab8b69 ↗
42. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 pn junctions10.1063/1.4945728 ↗
43. Nanocrystalline ZnSnN2 prepared by reactive sputtering, its Schottky diodes and heterojunction solar cells10.3390/nano13010178 ↗
44. Understanding and optimization of InN and high-indium InGaN alloys by metal-organic chemical vapor deposition
45. Fabrication of asymmetric GaN/InN/InGaN/GaN quantum-well light emitting diodes for reducing the quantum-confined stark effect in the blue-green region10.1143/APEX.2.021001 ↗
46. Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
47. Synthesis, lattice structure, and band gap of ZnSnN210.1557/mrc.2013.19 ↗
48. Martinez, Angela N. Fioretti, Eric S. Toberer, Adele C. Tamboli: Synthesis, structure, and optoelectronic properties of II–IV–V210.1039/C7TA00406K ↗
49. Growth of ZnSnN2 by molecular beam epitaxy10.1007/s11664-013-2962-8 ↗
50. Effects of electron concentration onthe optical absorption edge of InN10.1063/1.1704853 ↗
51. Calculation of electric field and optical transitions in InGaN∕ GaN quantum wells10.1063/1.2077843 ↗
52. Calculations for the band lineup of strained In x Ga1− xN/GaN quantum wells: Effects of strain on the band offsets10.1063/1.3066716 ↗
53. Bernard Gil, III-nitride semiconductors and their modern devices, OUP Oxford, Vol. 18, Chapter-15, 2013.
54. Quasi particle band structure of Zn-IV-N 2 compounds10.1103/PhysRevB.84.165204 ↗
55. Tunability of InGaN/GaN quantum well light emitting diodes through current10.1063/1.4813225 ↗
56. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures10.1063/1.1448668 ↗
57. Morkoc · 2009 · 1,2,3
58. A self-consistent solution of Schrödinger-Poisson equations using a nonuniformmesh,J.Appl.Phys
59. Variational calculations on a quantum well in an electric field10.1103/PhysRevB.28.3241 ↗
60. Constructive and comprehensive studies on the advantages of using staggered InxGa1-xN/InyGa1-yN QWs in LEDs10.1016/j.optmat.2017.02.028 ↗
61. Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output10.1016/j.ijleo.2017.04.086 ↗
62. A tunable LED based on InGaN-ZnSnN2/GaN QW in the infrared range, for optical communications10.1016/j.ijleo.2017.12.155 ↗