Non-polar ZnCdO/ZnO step-barrier quantum wells designed for THz emission
Source abstract
Abstract
Abstract Symmetric and asymmetric quantum wells of ZnCdO structures grown on ZnO in non-polar orientations are investigated for their potential in THz emission due to the intersubband transitions between the subbands in the conduction band. The Schrodinger and Poisson equations are solved self-consistently for the square and step-barrier quantum wells of the Zn 1 − x Cd x O layers for x up to 0.25. The results are represented as functions of the Cd concentration in the well and step-barrier layers and their dimensions. The role of the many-body effects on the intersubband transitions is discussed. It is found that emission wavelengths between 4.5 and 8.55 THz in the step-barrier quantum wells are possible in the case of an optical pumping at a wavelength in the range of 8.27–15.7 μ m. The depolarization and excitonic shifts are found to contribute to the bare intersubband transition energies as much as their 15 % at maximum.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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