Vacancy clusters in α-silicon nitride
Source abstract
Abstract
Abstract A variety of α-silicon nitride crystals has been examined by transmission electron microscopy. Vacancy clusters have been established to be a common feature of all forms of α-silicon nitride. Clarification of the origin of the vacancies may help to resolve the structural uncertainty of α-silicon nitride.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advanced ceramic materials synthesis · Metal and Thin Film Mechanics
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References (7)
Show source-provided references
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