The observation of stacking-fault tetrahedra in III-V compounds
Source abstract
Abstract
Abstract The first observations of stacking-fault tetrahedra in ion-implanted III-V compounds are reported. The structure and orientation of the stacking-fault tetrahedra are briefly described. The tetrahedra are present in the near-surface region that recrystallized during the annealing. High-resolution images suggest that the stacking-fault tetrahedra are of the vacancy type.
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Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
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References (15)
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