Secondary defects induced by ion and electron irradiation of GaSb

Secondary defects induced by ion and electron irradiation up to 6 dpa (displacements per atom) at liquid-nitrogen temperature in GaSb thin films are compared. For Sn ion (60 keV) irradiation, voids were observed. However, for high-energy electron (2 MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8 × 1014 voids/m2 and 3 × 1014 loops/m2) after irradiations at the same damage level of 6 dpa. It is concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage.