Crystal growth and defect study of BiSbTe3
Source abstract
Abstract
BiSbTe3 single crystals have been grown by the Bridgman technique. Microscopic observations of the as-grown crystals reveal typical features, such as striations on the top free surface, which are attributed to the effect of growth conditions. A nitric-acid-based reagent capable of revealing dislocations has been developed and tested. Etch pits are produced at the dislocation sites, but some discrepancies have been observed on matched cleavage surfaces. The structural difference between the matched cleavage surfaces is discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.