The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous silicon
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Abstract
Abstract This Letter investigates the role of dispersive hydrogen motion in light-induced defect creation from both monomolecular and bimolecular carrier recombination. The dispersive monomolecular model gives better agreement with the experimental time and intensity dependence of the light-induced defect creation process as well as the temperature dependence of the equilibrium defect density than does the dispersive bimolecular process. However, the activation energy of the creation rate and consistency with current degradation experiments remain unresolved issues.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (22)
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1. 10.1016/0022-3093(87)90219-510.1016/0022-3093(87)90219-5 ↗
2. 10.1063/1.33682210.1063/1.336822 ↗
3. Jackson, W. B. and Kakalios, J. 1988.Advances in Amorphous Semiconductors, Edited by: Fritzsche, H. p. 247Singapore: World Scientific.
4. 10.1103/PhysRevB.36.621710.1103/PhysRevB.36.6217 ↗
5. Madan, A., Thompson, J. J., Taylor, P. C., LeComber, P. G. and Hamakawa, Y., eds. 1988.Amorphous Silicon Technology, p. 231Pittsburg: Materials Research Society.
6. 10.1103/PhysRevLett.59.103710.1103/PhysRevLett.59.1037 ↗
7. 10.1016/0022-3093(87)90188-810.1016/0022-3093(87)90188-8 ↗
8. Krühler, W., Pfleiderer, H., Plättner, R. and Stetter, W. 1984. Optical Effects in Amorphous Semiconductors. AIP Conf. Proc. No. 120. 1984. Edited by: Taylor, P. C. and Bishop, S. G. pp.p. 311New York: American Institute of Physics.
9. Lee, C., Ohlsen, W. D. and Taylor, P. G. 1986a. Proceedings of the 28th International Conference on the Physics of Semiconductors. 1986a. Edited by: Engström, O. pp.p. 1085Singapore: World Scientific.
10. Adler, D., Hamakawa, Y. and Madan, A., eds. 1986 b.Materials Issues in Amorphous Semiconductor Technology, p. 225Pittsburgh Materials Research Society.
11. 10.1016/0022-3093(87)90021-410.1016/0022-3093(87)90021-4 ↗
12. 10.1063/1.9668710.1063/1.96687 ↗
13. 10.1063/1.9942210.1063/1.99422 ↗
14. 10.1016/0022-3093(74)90147-110.1016/0022-3093(74)90147-1 ↗
15. 10.1063/1.9286510.1063/1.92865 ↗
16. 10.1103/PhysRevB.37.420910.1103/PhysRevB.37.4209 ↗
17. 10.1103/PhysRevB.38.560310.1103/PhysRevB.38.5603 ↗
18. 10.1103/PhysRevB.35.131610.1103/PhysRevB.35.1316 ↗
19. Street R. A. · Phys. Rev. B · 1987 · 56 · 305
20. 10.1103/PhysRevB.32.2310.1103/PhysRevB.32.23 ↗
21. 10.1103/PhysRevB.23.79410.1103/PhysRevB.23.794 ↗
22. Wronski, C. R., Smith, Z. E., Aljishi, S., Chu, V., Shephard, K., Shen, D.S., Schwarz, R., Slobodin, D. and Wagner, S. 1987. Stability of Amorphous Silicon Alloy Materials and Devices. AIP Conf. Proc. No. 157. 1987. Edited by: Stafford, B. L. and Sabisky, E. pp.p. 171New York: American Institute of Physics.10.1063/1.36524 ↗