The pressure dependence of the photoluminescence intensity in hydrogenated amorphous silicon

Abstract The hydrostatic pressure dependence of the photoluminescence (PL) intensity from hydrogenated amorphous silicon has been measured in a diamond anvil cell at 80 K. The PL intensity is not quenched significantly by pressures up to ∼90 kbar, but in the pressure range ∼90–130 kbar quenching is observed. The luminescence displays a red shift of 1.9±0.1 meV kbar−1, with a hysteresis of ∼35meV at the highest pressures.