Higher-order Laue zone contrast from arsenic-doped silicon

Higher-order Laue zone (HOLZ) disc patterns obtained from As-doped and undoped Si have been examined under the exact 011 zone axis orientation at 100 kV. For this orientation, two lines in the HOLZ disc are produced from the intersections of HOLZ reflections, with two branches corresponding to atomic and tunnelling sites of the zeroth-layer dispersion surface. The As atom concentration and its strain contribution can be visibly detected by comparison of the two HOLZ line positions. A simple fitting between experiment and simulation permits a reasonable estimate of the As atom concentration.