Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED
Source abstract
Abstract
The Burgers vectors of the so-called threading screw dislocations (a total of 28 dislocations) in 4H-SiC were determined by large-angle convergent-beam electron diffraction. A new type of TSD, that is, b = c + 2a dislocation, was identified. Thus, all of the four types of TSD predicted by Onda et al. [Phil. Mag. Lett. 93 (2013) p.591] were identified.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
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