On the stability of twins during vacuum annealing of ZnSe films grown by molecular beam epitaxy
Source abstract
Abstract
Abstract ZnSe films grown on (100) Ge substrates by molecular beam epitaxy (MBE) contain a high density of defects such as twins and, in some instances, low-angle boundaries. In situ transmission electron microscopy (TEM) annealing and bulk vacuum annealing studies have been made on as-grown ZnSe/(100)Ge specimens. For both kinds of annealing, the twins were found to be very stable during heating–cooling cycles.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
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References (14)
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