journal article·2006-09

LACBED study of extended defects in 4H-SiC

M. Texier, G. Regula, M. Lancin, B. Pichaud

Philosophical Magazine Letters· Volume 86· Issue 9
Publisher page

Abstract

Large-angle convergent-beam electron diffraction analysis was successfully performed on pairs of partial dislocations so close that their effect on Bragg lines overlap. These pairs, dragging 3C layers, were nucleated by mechanical deformation of 4H-SiC. Splitting of Bragg lines on crossing a dislocation pair can be interpreted as resulting from a single dislocation having a Burgers vector equal to the sum of the two partial dislocation ones. Splitting rules using phase-shifted reflections () are also given depending on the phase shift produced by 3C lamellae. These results give a direction in agreement with weak-beam dark-field studies and suggest that Si core dislocations have highest mobilities for low-temperature (<700○C) plastic deformation.
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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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