Pressure-Induced transitions in amorphous Tl_xSe_100−x alloys

Abstract The electrical resistivity of bulk semiconducting amorphous TlxSe100−x alloys with 0 ≤ x ≤ 25 has been investigated up to a pressure of 14 GPa and down to liquidnitrogen temperature by use of a Bridgman anvil device. All the glasses undergo a discontinuous pressure-induced semiconducting-to-metal transition. X-ray diffraction studies on the pressure-recovered samples show that the high-pressure phase is the crystalline phase. The pressure-induced crystalline products are identified to be a mixture of Se having a hexagonal structure with a = 4·37 Å and c = 4·95 Å and TlSe having a tetragonal structure with a = 8·0 Å and c = 7·0 Å