The limited-flux model: Deuterium in boron-doped crystalline silicon
Source abstract
Abstract
In a medium that contains a high density of traps for the diffuser, the penetration speed is controlled by the time required to fill the traps. The predictions of the limited-flux model are verified in the deuterium transport in crystalline silicon highly doped with boron. The results also imply that the maximum amount of ‘mobile’ deuterium in crystalline silicon is below 1016cm−3, the detection level of secondary-ion mass spectroscopy.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, University of Western Ontario , London, Ontario, Canada, N6A 3K7
References (12)
Show source-provided references
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