journal article·1988-02

Gold silicide precipitates in silicon

F. H. Baumann, W. Schröter

Philosophical Magazine Letters· Volume 57· Issue 2
Publisher page

Abstract

Abstract This Letter describes the precipitation of gold in silicon from a highly supersaturated solution. After saturation of float-zone Si at 1275°C with gold, annealing experiments were performed at 850°C for various annealing times. By means of high-resolution electron microscopy, small particles (10–20 nm diameter) consisting of a metastable gold silicide were found. From selected-area diffraction patterns we deduce an orthorhombic unit cell with a = 0·960, b = 0·768 and c = 0·690 nm.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Silicon Nanostructures and Photoluminescence

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References (3)

Show source-provided references
1. 10.1016/0040-6090(80)90269-210.1016/0040-6090(80)90269-2 ↗
2. Okamoto H. · Bull. Alloy Phase Diagrams · 1983 · 4
3. 10.1007/BF0061761910.1007/BF00617619 ↗