The kinetic limit of superheating induced by semicoherent interfaces

The superheating behaviour of embedded particles induced by semicoherent interfaces has been observed in many circumstances. In this paper, a phenomeno-logical model for melt nucleation on misfit dislocations at a semicoherent interface is proposed. A kinetic limit for semicoherent-interface-induced superheating, which is in good agreement with the results of experiments and computer simulations, is derived from this model. Calculations and analyses based on the model reveal that melting prefers to initiate at the semicoherent interface and that superheating of embedded particles is possible for a melt nucleation contact angle less than 90. Among the matrix-dependent parameters, the contact angle and the shear modulus of the matrix are found to be dominant in determining the superheating of embedded particles. 1.