Generation of cracks at triple junctions of grain boundaries in mechanically loaded polysilicon
Source abstract
Abstract
A theoretical model is suggested which describes the nucleation of cracks at triple junctions of grain boundaries (GBs) in polysilicon materials deformed at low temperatures. In the framework of the model, cracks nucleate in the stress fields of defects located at triple junctions and formed due to intense GB sliding. It is shown that the nucleation of cracks at triple junctions can occur in polysilicon in quasistatic and non-symmetric cyclic load regimes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Microstructure and mechanical properties · Ion-surface interactions and analysis · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
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