Electrical characteristics of p-Si/TiO ₂ /Al and p-Si/TiO ₂ -Zr/Al Schottky devices

İbrahim Hüdai Taşdemir; Özkan Vural; İlbilge Dökme

doi:10.1080/14786435.2016.1178403

journal article·2016-06-02

Electrical characteristics of p-Si/TiO ₂ /Al and p-Si/TiO ₂ -Zr/Al Schottky devices

İbrahim Hüdai Taşdemir, Özkan Vural, İlbilge Dökme

Philosophical Magazine· Volume 96· Issue 16

Publisher page

Source abstract

Abstract

Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO2 dispersion in H2O to construct p-Si/TiO2/Al Schottky barrier diode (D1) and the other one with TiO2 dispersion doped with zirconium to construct p-Si/TiO2-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current–voltage (I–V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (ΦB0), series resistance (Rs) and interface state density (Nss) were calculated from I–V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO2/Al Schottky device were influenced by the zirconium dopant in TiO2.

Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

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Funding

Amasya University, Scientifict Research Unit

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